Avalanche diode with breakdown voltage controlled by gate length

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United States of America Patent

PATENT NO 7056761
SERIAL NO

10388815

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Abstract

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In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate.

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Patent Owner(s)

  • NATIONAL SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Concannon, Ann San Jose, CA 28 220
Hoppet, Peter J San Jose, CA 1 12
ter, Beek Marcel Pleasanton, CA 18 139
Vashchenko, Vladislav Palo Alto, CA 158 1148

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