Curvilinear axis set-up for charged particle lithography
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United States of America Patent
Stats
-
Jul 17, 2001
Grant Date -
N/A
app pub date -
Mar 11, 1999
filing date -
Mar 11, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
Keyhole shaped slit apertures, sized and oriented to define a desired deflected beam trajectory, such as a planar curvilinear trajectory, are provided for respective deflectors of a charged particle beam system. The beam is statically deflected to a maximum deflection using all deflectors above/prior to a particular slit aperture along the path of the charged particle beam and then scanned in directions orthogonal and parallel to the direction of static deflection while recording current of the charged particle beam intercepted by edges of each slit aperture, in sequence. Correction of deflector alignment and/or driver current (or voltage) is made based on recorded intercepted beam current. The sequence of correction is repeated for calibration, deflection/axis compensation, beam centering and deflection gain and axis compensation parameter adjustment.
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