Semiconductor devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11563108
APP PUB NO 20210159327A1
SERIAL NO

17011444

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Importance

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Abstract

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A semiconductor device including: a first structure including: a first semiconductor pattern protruding from a substrate, the first semiconductor pattern being a channel; a first conductive pattern surrounding the first semiconductor pattern, the first conductive pattern being a gate electrode; a first impurity region under the first semiconductor pattern, the first impurity region contacting the first semiconductor pattern, the first impurity region being a source or drain region; and a second impurity region contacting the first semiconductor pattern, the second impurity region being the other of the source or drain region; and a second structure including: second semiconductor patterns spaced apart from each other, each of the second semiconductor patterns protruding from the substrate; second conductive patterns surrounding the second semiconductor patterns, respectively; and first contact plugs connected to the second conductive patterns, wherein the first structure is a vfet, and the second structure includes a resistor or a capacitor.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO. LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Donghwan Suwon-si, KR 8 4
Yun, Seungchan Suwon-si, KR 27 5

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