Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device
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United States of America Patent
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Nov 17, 2015
Grant Date -
Jan 16, 2014
app pub date -
Sep 12, 2013
filing date -
Oct 14, 2010
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Abstract
A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.
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