Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method

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United States of America Patent

PATENT NO 9018118
APP PUB NO 20130155571A1
SERIAL NO

13716544

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Abstract

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A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba1-xSrxTiyO3, wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is within the range of 0.002

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Patent Owner(s)

  • MITSUBISHI MATERIALS CORPORATION;STMICROELECTRONICS (ROUSSET) SAS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guegan, Guillaume Tours, FR 6 21
Sakurai, Hideaki Naka, JP 172 472
Soyama, Nobuyuki Sanda, JP 72 287
Watanabe, Toshiaki Naka, JP 362 4649

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