Laser diode device
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United States of America Patent
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Jun 28, 2011
Grant Date -
Sep 9, 2010
app pub date -
Jan 22, 2010
filing date -
Mar 5, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A laser diode device with which a low voltage is realized is provided. The laser diode device includes: a substrate; a semiconductor laminated structure including a first conductive cladding layer, an active layer, and a second conductive cladding layer on one face side of the substrate and having a contact layer as the uppermost layer, in which a protrusion is formed in the contact layer and the second conductive cladding layer; and an electrode provided on the contact layer. The contact layer has a concavo-convex structure on a face on the electrode side, and the electrode is contacted with the contact layer at contact points of a top face, a side face, and a bottom face of the concavo-convex structure.
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