Integrated circuitry, method used in the fabrication of a vertical transistor, and method used in the fabrication of integrated circuitry

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United States of America Patent

PATENT NO 11777011
SERIAL NO

17026629

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Abstract

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Integrated circuitry comprises an electronic component. Insulative silicon dioxide is adjacent the electronic component. The insulative silicon dioxide has at least one of (a) and (b), where: (a): an average concentration of elemental-form H of 0.002 to 0.5 atomic percent; and (b): an average concentration of elemental-form N of 0.005 to 0.3 atomic percent. Other embodiments, including method, are disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hull, Jeffery B Boise, US 16 27
Laskar, Masihhur R Boise, US 7 0
Liu, Hung-Wei Meridian, US 45 81

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