MEMS device trench plating process and apparatus for through hole vias
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United States of America Patent
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-
Jun 19, 2007
Grant Date -
Mar 1, 2007
app pub date -
Aug 26, 2005
filing date -
Aug 26, 2005
priority date (Note) -
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Abstract
A method for forming through hole vias in a substrate uses a partially exposed seed layer to plate the bottom of a blind trench formed in the front side of a substrate. Thereafter, the plating proceeds substantially uniformly from the bottom of the blind hole to the top. To form the through hole, the rear face of the substrate is ground or etched away to remove material up to and including the dead-end wall of the blind hole.
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