Low-k isolation spacers for conductive regions
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United States of America Patent
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Mar 30, 2010
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app pub date -
Aug 7, 2006
filing date -
Aug 7, 2006
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Abstract
A multi-component low-k isolation spacer for a conductive region in a semiconductor structure is described. In one embodiment, a replacement isolation spacer process is utilized to enable the formation of a two-component low-k isolation spacer adjacent to a sidewall of a gate electrode in a MOS-FET device.
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