Integrated circuit having a cell with a resistivity changing layer
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United States of America Patent
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Aug 10, 2010
Grant Date -
Feb 12, 2009
app pub date -
Aug 10, 2007
filing date -
Aug 10, 2007
priority date (Note) -
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Abstract
In an embodiment of the invention, an integrated circuit having a cell is provided. The cell may include a field effect transistor structure which includes a gate stack and a resistivity changing material structure disposed above the gate stack, wherein the resistivity changing material structure includes a resistivity changing material which is configured to change its resistivity in response to the application of an electrical voltage to the resistivity changing material structure.
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