Semiconductor structure with chamfered capacitor connection line adjacent bit line and method for manufacturing semiconductor structure thereof

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United States of America Patent

PATENT NO 11800699
APP PUB NO 20220310624A1
SERIAL NO

17447137

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Abstract

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A semiconductor structure includes a substrate, bit line structures, and capacitor connection lines. A plurality of bit line structures are arranged on the substrate. Contact holes are formed between adjacent bit line structures. A capacitor connection line includes a first conductive block and a second conductive block. The first conductive block and the second conductive block are sequentially filled in a contact hole. A chamfered structure is formed on a top end of the first conductive block. The chamfered structure is adjacent to a bit line structure. A bottom end of the second conductive block matches the chambered structure.

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Patent Owner(s)

  • CHANGXIN MEMORY TECHNOLOGIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hung, Hai-Han Hefei, CN 27 25
Lu, Jingwen Hefei, CN 61 39

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