Method of fabricating a complementary metal-oxide semiconductor sensor device
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United States of America Patent
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Jun 5, 2001
Grant Date -
N/A
app pub date -
Aug 19, 1998
filing date -
Jun 9, 1998
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Abstract
A planarized layer is formed on the substrate, and an opening is formed. A microlens resist layer is formed over the planarized layer, wherein the microlens resist layer has a bigger thickness in the opening than on the planarized layer. A first photoresist layer is formed on the microlens layer. The first photoresist layer has a pattern align to the color filter. A first exposure step is performed at least onto the microlens layer to form a first exposed portion, using the first photoresist layer as a mask, and the first photoresist layer is removed. A second photoresist layer is performed on the microlens resist layer. The second photoresist layer has a pattern align to the opening. A second exposure step is performed at least onto the microlens layer to form a second exposed portion, using the second photoresist layer as a mask, and the second photoresist layer is removed. A positive development step is performed to remove the first exposed portion and the second exposed portion of the microlens resist layer and to form a plurality of microlens blocks align to the color filter. An after-development-exposure step and a curing step are performed so that each of the microlens blocks forms a microlens. The microlens has a substantially rounded semi-circle structure.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
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Patent Owner(s)
- UNITED MICROELECTRONICS CORP.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Lin, Wei-Chang | Hsinchu, TW | 5 | 30 |
Pai, Yuan-Chi | Nantou, TW | 24 | 109 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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