Method of fabricating a complementary metal-oxide semiconductor sensor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6242277
SERIAL NO

09136697

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A planarized layer is formed on the substrate, and an opening is formed. A microlens resist layer is formed over the planarized layer, wherein the microlens resist layer has a bigger thickness in the opening than on the planarized layer. A first photoresist layer is formed on the microlens layer. The first photoresist layer has a pattern align to the color filter. A first exposure step is performed at least onto the microlens layer to form a first exposed portion, using the first photoresist layer as a mask, and the first photoresist layer is removed. A second photoresist layer is performed on the microlens resist layer. The second photoresist layer has a pattern align to the opening. A second exposure step is performed at least onto the microlens layer to form a second exposed portion, using the second photoresist layer as a mask, and the second photoresist layer is removed. A positive development step is performed to remove the first exposed portion and the second exposed portion of the microlens resist layer and to form a plurality of microlens blocks align to the color filter. An after-development-exposure step and a curing step are performed so that each of the microlens blocks forms a microlens. The microlens has a substantially rounded semi-circle structure.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Wei-Chang Hsinchu, TW 5 30
Pai, Yuan-Chi Nantou, TW 24 109

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