Method and apparatus for forming a film on an object to be processed
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 24, 2002
Grant Date -
N/A
app pub date -
Jul 6, 2000
filing date -
Jul 7, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A processing apparatus includes a processing chamber, a support mechanism provided in the processing chamber to support a wafer having an underlying film formed on a major surface and adjacent side face, and a supply member provided at the processing chamber and spaced from the support mechanism, to supply an incoming gas into the processing chamber. A gas carrying mechanism is provided for selectively sending a film forming gas and etching gas to the gas supply member. A main film is formed on a portion of an underlying film formed on the wafer supported on the support mechanism, by using the film forming gas supplied from the gas supply member. A portion of the underlying film, which is exposed, not covered with the main film, is etched away by the etching gas supplied from the gas supplied member.
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