Device and method for providing a tunable semiconductor laser
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United States of America Patent
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Nov 23, 2004
Grant Date -
Apr 3, 2003
app pub date -
Aug 8, 2002
filing date -
Sep 28, 2001
priority date (Note) -
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Abstract
A semiconductor laser device including a light reflecting facet positioned on a first side of the semiconductor device, a light emitting facet positioned on a second side of the semiconductor device thereby forming a resonator between the light reflecting facet and the light emitting facet, and an active layer configured to radiate light in the presence of an injection current, the active layer positioned within the resonator. A wavelength selection structure is positioned within the resonator and configured to select a spectrum of the light including multiple longitudinal modes, the spectrum being output from the light emitting facet. Also, an electrode positioned along the resonator and configured to provide the injection current, and a tuning current that adjusts a center wavelength of the spectrum selected by the wavelength selection structure.
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