Preparation of halftone phase shift mask blank
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United States of America Patent
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Sep 16, 2008
Grant Date -
Aug 25, 2005
app pub date -
Feb 17, 2005
filing date -
Feb 19, 2004
priority date (Note) -
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Abstract
In preparing a halftone phase shift mask blank, a metal and silicon-containing compound film serving as a halftone phase shift film is formed on a transparent substrate by a co-sputtering process including the steps of disposing a metal-containing target and a silicon target in a chamber, feeding sputtering gases into the chamber, and applying electric powers across both the targets at the same time. The sputtered region area of the metal-containing target is smaller than the sputtered region area of the silicon target.
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