Anisotropic, fluorine-based plasma etching method for silicon
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United States of America Patent
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Oct 16, 2001
Grant Date -
N/A
app pub date -
Apr 29, 1999
filing date -
Feb 20, 1997
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Abstract
A method for anisotropic plasma etching of laterally defined patterns in a silicon substrate is described. Protective layers made of at least one silicon compound with a second reaction partner that is entirely compatible with the chemistry of the etching process are deposited before and/or during plasma etching onto the sidewalls of the laterally defined patterns.
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