Semiconductor device and method for manufacturing the same
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United States of America Patent
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Oct 26, 2010
Grant Date -
Sep 7, 2006
app pub date -
Mar 1, 2006
filing date -
Mar 2, 2005
priority date (Note) -
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Abstract
A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.
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