Production method of field-effect transistor, production method of array substrate, field-effect transistor, array substrate, and display panel
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United States of America Patent
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Jun 4, 2019
Grant Date -
Oct 25, 2018
app pub date -
May 23, 2017
filing date -
Jun 6, 2016
priority date (Note) -
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Abstract
This disclosure relates to a field-effect transistor and a production method thereof, an array substrate and a production method thereof, and a display panel. The production method comprises: forming an active layer on a substrate; forming a gate electrode insulating layer on the active layer to define a gate electrode area as well as a source electrode area and a drain electrode area located on two sides of the gate electrode area on the active layer; applying a gate electrode layer to cover surfaces of the active layer and the gate electrode insulating layer; patterning the gate electrode layer to form a first contact electrode, a second contact electrode, and a gate electrode, wherein the first contact electrode is located on the source electrode area, the second contact electrode is located on the drain electrode area, and the gate electrode is located on the gate electrode insulating layer.
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