Fabrication method of nitride forming on silicon substrate

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United States of America Patent

PATENT NO 9281184
APP PUB NO 20130217212A1
SERIAL NO

13442885

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Abstract

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The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer.

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Patent Owner(s)

  • NATIONAL TAIWAN UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chih-Yen Taipei, TW 45 184
Yang, Chih-Chung Taipei, TW 37 148

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