Semiconductor device and a process for producing same
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United States of America Patent
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Jun 29, 2004
Issued Date -
N/A
app pub date -
May 21, 2003
filing date -
Jan 18, 1999
priority date (Note) -
Expired
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Abstract
In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is improved, and latch up resistance is improved without increasing the process. A p type semiconductor substrate, a collector buried region and an n type epitaxial layer are formed, a p type first impurity region is formed in the n type epitaxial layer, an n type second impurity region is formed in the first impurity region, an N.sup.+ sinker is formed, and a collector electrode is formed, with a common electrode being formed on the first and second impurity regions.
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