Semiconductor device with high-k gate dielectric and quasi-metal gate, and method of forming thereof
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United States of America Patent
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Oct 9, 2007
Grant Date -
Jan 26, 2006
app pub date -
Jul 20, 2005
filing date -
Jul 21, 2004
priority date (Note) -
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Abstract
A process and apparatus for a semiconductor device is provided. A device comprises a first transistor having a first charge carrier type. The first transistor comprises a high-k gate dielectric and a first doped electrode. The first charge carrier type comprises one of p-type and n-type and the first doped electrode comprises the other of p-type and n-type. The device further comprises a second transistor having a charge carrier type opposite the first charge carrier type. The second transistor comprises the high-k gate dielectric, and a second doped electrode, wherein the second doped electrode comprises the other of p-type and n-type.
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