Semiconductor device and method of fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11264498
APP PUB NO 20210391469A1
SERIAL NO

16901004

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Abstract

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A semiconductor device includes a semiconductor substrate, a first source region, a first drain region, a first gate, a second source region, a second drain region, a second gate, and a first dielectric layer. The first source region and the first drain region are disposed within the semiconductor substrate. The first gate is disposed over the semiconductor substrate in between the first source region and the first drain region. The second source region and the second drain region are disposed within the semiconductor substrate. The second gate is disposed over the semiconductor substrate in between the second source region and the second drain region. The first dielectric layer is located in between the first gate and the semiconductor substrate, and in between the second gate and the semiconductor substrate, wherein the first dielectric layer extends from a position below the first gate to a position below the second gate.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doornbos, Gerben Kessel-Lo, BE 176 1061
Duriez, Blandine Brussels, BE 82 275
Manfrini, Mauricio Hsinchu County, TW 116 113
Van, Dal Marcus Johannes Henricus Linden, BE 109 195
Vellianitis, Georgios Heverlee, BE 134 1010

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