Single crystalline gallium nitride thick film having reduced bending deformation
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United States of America Patent
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Nov 24, 2009
Grant Date -
May 25, 2006
app pub date -
Nov 23, 2005
filing date -
Nov 23, 2004
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Abstract
The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt angle of C-axis to the <0001> direction per surface distance of 0.0022°/mm exhibits little bending deformation even at a thickness of 1 mm or more, and therefore, is beneficially used as a substrate for a luminescent device.
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