Methods for reducing spherical aberration effects in photolithography
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United States of America Patent
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Feb 2, 2010
Grant Date -
Jan 4, 2007
app pub date -
Sep 5, 2006
filing date -
Aug 28, 2003
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Abstract
Methods to at least partially compensate for photoresist-induced spherical aberration that occurs during mask imaging used for photolithographic processing of semiconductor devices, LCD elements, thin-film magnetic heads, reticles and other substrates including photo-defined structures thereon are disclosed. A photoresist or other photosensitive material may be irradiated with a mask pattern image including a selected nonzero spherical aberration value to compensate for photoresist-induced spherical aberration.
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