Post-processing method of quantum dot light-emitting diode

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United States of America Patent

PATENT NO 11877501
SERIAL NO

17419647

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Abstract

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A post-processing method of a quantum dot light-emitting diode, which includes the following steps: providing a quantum dot light-emitting diode, the quantum dot light-emitting diode includes a cathode and an anode arranged oppositely, and a quantum dot light-emitting layer arranged between the cathode and the anode; energizing the cathode and anode of the quantum dot light-emitting diode, and performing a light irradiation treatment on the quantum dot light-emitting diode.

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Patent Owner(s)

  • TCL TECHNOLOGY GROUP CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Xiang, Chaoyu Huizhou, CN 17 22
Zhang, Jie Huizhou, CN 965 8182

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