Method of producing MOS transistor
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United States of America Patent
Stats
-
Jun 25, 2002
Grant Date -
N/A
app pub date -
Jun 6, 2001
filing date -
Jan 29, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The surface of a silicon substrate is sputter-etched so that silicon clusters sputtered out form a silicon film on a side wall spacer. Then, a metal film of cobalt, titanium or the like is built up on the entire surface. Thereafter, silicidizing process is carried out to form metal silicide layers on a diffusion layer and the side wall spacer. Then, an inter-layer insulation film 14 is formed and is photo-etched to provide the inter-layer insulation film with a contact hole 15 overlapping the side wall spacer.
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