Hall effect sensor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 11, 2004
Issued Date -
N/A
app pub date -
Feb 26, 2003
filing date -
Aug 30, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/.degree. C. and with high Hall effect coefficient for temperatures greater than 200.degree. C. formed in a multilayer structure comprising a thin active layer deposited on a substrate, wherein the substrate is made of monocrystalline silicon carbide (SiC), and wherein the thin active layer is made of a weakly type n-doped silicon carbide (SiC) semiconductor in the exhaustion regime.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully