Method for manufacturing semiconductor optical device
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United States of America Patent
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Jul 20, 2010
Grant Date -
Sep 18, 2008
app pub date -
Aug 13, 2007
filing date -
Mar 16, 2007
priority date (Note) -
Expired
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Abstract
A method for manufacturing a semiconductor optical device includes forming a BDR (Band Discontinuity Reduction) layer of a first conductivity type doped with an impurity, depositing a contact layer of the first conductivity type in contact with the BDR layer after forming the the BDR layer, the contact layer being doped with the same impurity as the BDR layer and used to form an electrode, and heat treating after forming the contact layer.
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