N-face high electron mobility transistors with low buffer leakage and low parasitic resistance
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United States of America Patent
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May 3, 2011
Grant Date -
Oct 2, 2008
app pub date -
Mar 31, 2008
filing date -
Mar 29, 2007
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Abstract
A method for fabricating nitrogen-face (N-face) nitride-based electronic devices with low buffer leakage, comprising isolating a buffer from a substrate with an AlGaInN nucleation layer to suppress impurity incorporation from the substrate into the buffer. A method for fabricating N-face nitride-based electronic devices with low parasitic resistance and high breakdown, comprising capping a device structure with a conductive layer to provide extremely low access and/or contact resistances, is also disclosed.
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