Mask blank and mask for electron beam exposure
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United States of America Patent
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Nov 4, 2008
Grant Date -
Dec 1, 2005
app pub date -
May 31, 2005
filing date -
May 28, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A mask blank for electron beam exposure includes a pattern support layer that transmits an electron beam therethrough, an electron beam scattering layer formed on the pattern support layer, and a support body supporting the pattern support layer and the electron beam scattering layer. The pattern support layer is formed by a material that has an amorphous structure and that is mainly composed of carbon-silicon bonds. The pattern support layer is a tensional stress membrane that has a surface roughness of 0.2 (nm, Rms) or less. A mask for electron beam exposure is formed by patterning the electron beam scattering layer of the mask blank.
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