Method for manufacturing semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9780070
APP PUB NO 20150333036A1
SERIAL NO

14728134

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Abstract

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A first semiconductor substrate is used which has a structure in which a peeling layer is not formed in a section subjected to a first dividing treatment, so that the peeling layer is not exposed at the end surface of a second semiconductor substrate when the second semiconductor substrate is cut out of the first semiconductor substrate. In addition, a supporting material is provided on a layer to be peeled of the second semiconductor substrate before the second semiconductor substrate is subjected to a second dividing treatment.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chida, Akihiro Atsugi, JP 108 1582
Kawanabe, Chiho Tochigi, JP 8 123
Oikawa, Yoshiaki Isehara, JP 184 3414

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