Method of forming source/drain region of semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 25, 2007
Grant Date -
Oct 12, 2006
app pub date -
Apr 7, 2006
filing date -
Apr 11, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming a source/drain region of a semiconductor device includes forming a photoresist pattern through which an NMOS region of a semiconductor substrate is exposed, and then performing an ion implant process to form NMOS LDD regions in the semiconductor substrate of the NMOS region. An ion implant process is performed to form PMOS pocket regions in a PMOS region of the semiconductor substrate. Spacers are formed on sidewalls of a PMOS gate electrode pattern and sidewalls of an NMOS gate electrode pattern, and an ion implant process is performed to form PMOS source/drain regions in the semiconductor substrate in which the PMOS pocket regions are formed. An ion implant process is performed to form NMOS source/drain regions in the semiconductor substrate in which the NMOS LDD regions are formed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully