Method of manufacturing a flash memory cell having inter-poly-dielectric isolation
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United States of America Patent
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Sep 4, 2001
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N/A
app pub date -
Nov 23, 1999
filing date -
Jan 12, 1999
priority date (Note) -
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Abstract
A method of forming round corners for a gate oxide between a floating gate and a control gate of a memory cell comprises the steps of forming the floating gate over a tunnel oxide; forming a mask over the floating gate; forming rounded end caps adjacent distal ends of the mask; transferring the rounding of the end caps to top corners of the floating gate; forming the gate oxide over the floating gate; and, forming the control gate over the gate oxide. A memory cell having a rounded corner interface between the floating gate and control gate is also provided.
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