Electro-absorption modulated laser with high operating temperature tolerance
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United States of America Patent
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Oct 10, 2006
Grant Date -
Jan 16, 2003
app pub date -
Dec 4, 2001
filing date -
Jul 11, 2001
priority date (Note) -
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Abstract
An electra-absorption modulator and electra-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating through the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.
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