Semiconductor device and method of forming the same

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United States of America Patent

PATENT NO 11830889
APP PUB NO 20210351210A1
SERIAL NO

17384355

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Abstract

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A low noise device includes an isolation feature in a substrate. The low noise device further includes a gate stack over a channel in the substrate, wherein the isolation feature is adjacent to the channel. The low noise device further includes a spacer surrounding a portion of the gate stack, wherein an edge of the gate stack is spaced from an edge of the isolation feature adjacent to the spacer by a distance ranging from a minimum spacing distance to about 0.3 microns (μm).

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, Meng-Chang Hsinchu, TW 10 0
Huang, Chi-Feng Hsinchu, TW 452 1420
Kuo, Fang-Ting Hsinchu, TW 17 20
Liang, Victor Chiang Hsinchu, TW 101 252
Tsai, Fu-Huan Hsinchu, TW 32 30
Wei, Yu-Lin Hsinchu, TW 6 22

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