Semiconductor device and semiconductor memory device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11374130
APP PUB NO 20210249540A1
SERIAL NO

17001208

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Abstract

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A semiconductor device of an embodiment includes: a first oxide semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode; a gate insulating layer provided between the third region and the gate electrode; a first electrode electrically connected to the first region; a second electrode electrically connected to the second region; and a second oxide semiconductor layer provided in at least one of a position between the first region and the first electrode and a position between the second region and the second electrode and containing indium (In), aluminum (Al), and zinc (Zn), an atomic ratio of aluminum to a sum of indium, aluminum, and zinc being 8% or more and 23% or less, and an atomic ratio of indium to the sum of indium, aluminum, and zinc being 45% or less.

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Patent Owner(s)

  • KIOXIA CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hattori, Shigeki Kawasaki Kanagawa, JP 54 323
Ikeda, Keiji Kawasaki Kanagawa, JP 80 828
Ueda, Tomomasa Yokohama Kanagawa, JP 90 1273

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