Semiconductor memory

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United States of America Patent

PATENT NO 5463577
SERIAL NO

08365104

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Abstract

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There is provided a semiconductor memory having a reduced power consumption in data access and a high access speed in a NAND cell array scheme in which a memory cell unit is constituted by cascade-connecting a plurality of memory cells with each other. A memory cell array is divided into a plurality of sub-arrays, and the divided sub-arrays are selectively activated, thereby decreasing the capacitances of the word lines, register word lines, bit lines, and the like which are charged/discharged in data access.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hasegawa, Takehiro Yokohama, JP 63 719
Oowaki, Yukihito Yokohama, JP 80 1600

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