Dual-port SRAM cell structure
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United States of America Patent
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Oct 12, 2021
Grant Date -
Feb 4, 2021
app pub date -
Jul 31, 2019
filing date -
Jul 31, 2019
priority date (Note) -
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Abstract
A dual-port SRAM includes a substrate, first and second active regions over the substrate and oriented lengthwise generally along a first direction; first and second gate electrodes oriented lengthwise generally along a second direction perpendicular to the first direction. The first and second gate electrodes engage the first and second active regions to form first and second pass gate transistors, respectively. The dual-port SRAM further includes a first gate contact disposed over the first gate electrode and electrically connected to the first gate electrode and a first source/drain contact oriented lengthwise generally along the second direction. The first source/drain contact directly contacts source/drain features of the first and second pass gate transistors. A portion of the first gate contact and a portion of the first source/drain contact are at a same vertical level from a top surface of the substrate and are aligned along the first direction.
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