Importance

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Abstract

A wavelength tunable semiconductor laser device includes a semiconductor active layer located opposite a first conductivity type semiconductor substrate and producing light in response to current injected into the active layer; a semiconductor tuning layer located opposite the semiconductor substrate, having a refractive index that varies in response to an electric field applied to the tuning layer, and tuning the oscillation wavelength of the laser; a second conductivity type semiconductor spacer layer interposed between the active layer and the tuning layer; front and rear resonator facets located at opposite ends of the semiconductor active layer and the semiconductor tuning layer and having different reflectivities from each other; a first electrode supplying an electric field to the semiconductor tuning layer and divided into a plurality of portions in a resonator length direction of the laser; a second electrode for injecting current into the semiconductor active layer; and a third second electrodes and electrically connected to the semiconductor spacer layer.

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First Claim