Integrated chip with a gate structure over a recess
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United States of America Patent
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Aug 16, 2022
Grant Date -
N/A
app pub date -
Nov 20, 2020
filing date -
Nov 20, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
The present disclosure relates to an integrated chip comprising a substrate having a first top surface disposed at a first height, a second top surface disposed at a second height that is less than the first height, and a connecting surface extending from the first top surface to the second top surface. A first source/drain region is disposed along the first top surface of the substrate. A second source/drain region is disposed along the second top surface of the substrate and is laterally separated from the first source/drain region by a channel region of the substrate. A gate structure is arranged between the first source/drain region and the second source/drain region. The gate structure extends from over the first top surface of the substrate to over the connecting surface of the substrate. The gate structure also extends below the first top surface of the substrate.
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