Method of making a contact structure

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11996361
APP PUB NO 20220384338A1
SERIAL NO

17885026

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Abstract

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A method of making a semiconductor device includes etching an insulating layer to form a first opening and a second opening. The method further includes depositing a conductive material in the first opening. The method further includes performing a surface modification process on the conductive material. The method further includes depositing, after the surface modification process, a first liner layer in the second opening, wherein the first liner layer extends over the conductive material and the insulating layer. The method further includes depositing a conductive fill over the first liner layer, wherein the conductive fill includes a different material from the conductive material.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chi, Chih-Chien Hsinchu, TW 60 545
Chin, Shu-Cheng Hsinchu, TW 18 2
Lin, Chi-Feng Hsinchu, TW 68 228
Liu, Yao-Min Hsinchu, TW 11 4
Su, Hung-Wen Hsinchu, TW 108 1241

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