Thin-film-transistor based complementary metal-oxide-semiconductor (CMOS) circuit

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United States of America Patent

PATENT NO 11659722
APP PUB NO 20200203432A1
SERIAL NO

16226209

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Embodiments herein describe techniques for a semiconductor device including a semiconductor substrate, a first device of a first wafer, and a second device at back end of a second wafer, where the first device is bonded with the second device. A first metal electrode of the first device within a first dielectric layer is coupled to an n-type oxide TFT having a channel layer that includes an oxide semiconductor material. A second metal electrode of the second device within a second dielectric layer is coupled to p-type organic TFT having a channel layer that includes an organic material. The first dielectric layer is bonded to the second dielectric layer, and the first metal electrode is bonded to the second metal electrode. The n-type oxide TFT and the p-type organic TFT form a symmetrical pair of transistors of a CMOS circuit. Other embodiments may be described and/or claimed.

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Patent Owner(s)

  • INTEL CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doyle, Brian Portland, US 112 2861
Karpov, Elijah Portland, US 17 157
Majhi, Prashant San Jose, US 163 1560
Pancholi, Anup Hillsboro, US 31 81
Pillarisetty, Ravi Portland, US 449 7359
Rachmady, Willy Beaverton, US 426 5625
Sharma, Abhishek Hillsboro, US 274 1645

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