Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
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United States of America Patent
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Dec 19, 2023
Grant Date -
Sep 17, 2020
app pub date -
May 27, 2020
filing date -
May 8, 2017
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Abstract
A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.
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