Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system
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United States of America Patent
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Mar 20, 1990
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N/A
app pub date -
Jun 9, 1988
filing date -
Jun 9, 1988
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Expired
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Abstract
Silicon epitaxial layers are grown on oriented silicon substrates using an open-tube Si-I.sub.2 chemical vapor deposition (CVD) reactor in the temperature range of 650.degree.-740.degree. C. Hydrogen and inert gases such as helium and argon are used as carrier gases, and the iodine/carrier gas mixture contacts the silicon source to produce silicon iodide which disproportionates to deposit pure silicon epitaxial layers on the substrate.
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