Semiconductor structure having word lines intersect with active regions

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United States of America

PATENT NO 11980024
APP PUB NO 20220399345A1
SERIAL NO

17595618

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Abstract

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The present disclosure relates to the field of semiconductor technologies, and provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a semiconductor base, bit lines and word lines, wherein a plurality of active regions is provided in the semiconductor base; the bit lines are disposed in the semiconductor base, extend in a first direction and are connected to the active regions; and the word lines are disposed on the semiconductor base above the bit lines, extend in a second direction, and intersect with the active regions.

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Patent Owner(s)

  • CHANGXIN MEMORY TECHNOLOGIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Luo, Qu Hefei, CN 5 1

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