Semiconductor memory device having three-dimensional structure and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11315935
APP PUB NO 20210066313A1
SERIAL NO

16810813

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Abstract

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A semiconductor memory device includes a stack disposed over a first substrate; an etch barrier including a plurality of dummy channels which pass through the stack and surround a coupling region; and a plurality of channels passing through the stack in a cell region outside the coupling region. The stack has a structure in which first dielectric layers and second dielectric layers are alternately stacked, inside the coupling region, and has a structure in which the first dielectric layers and electrode layers are alternately stacked, outside the coupling region.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jung, Soo Nam Seoul, KR 16 33
Kim, Dong Hyuk Seoul, KR 105 292
Oh, Sung Lae Cheongju-si, KR 93 258
Park, Tae Sung Icheon-si, KR 55 200

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