Thin dielectric films for DRAM storage capacitors
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United States of America Patent
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Oct 8, 2002
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N/A
app pub date -
Aug 29, 2000
filing date -
Aug 29, 2000
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Abstract
Methods for forming multiple dielectric layers at low temperatures include forming a number of metallic layers on a substrate and oxidizing the metallic layers to different dielectric oxides. Oxidation is performed one layer at a time, or all layers together. Dielectric layers thus formed have multiple different oxides in layers, reducing defects, providing high capacitance, and low leakage currents.
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