Semiconductor structure and manufacturing method thereof

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United States of America Patent

PATENT NO 11856756
APP PUB NO 20230013207A1
SERIAL NO

17659050

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Abstract

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The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The method of manufacturing the semiconductor structure includes: providing a substrate; forming, on the substrate, a first initial conductive layer, a sacrificial layer and a first mask layer with a pattern that are stacked sequentially, a thickness of the sacrificial layer being 10 nm-20 nm; and etching, with the first mask layer as a mask, the first initial conductive layer and the substrate to form a bit line (BL) contact region.

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Patent Owner(s)

Patent OwnerAddress
CHANGXIN MEMORY TECHNOLOGIES INCNO 388 XINGYE AVENUE AIRPORT INDUSTRIAL PARK ECONOMIC AND TECHNOLOGICAL DEVELOPMENT AREA HEFEI ANHUI 230601

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhan, Mengdan Hefei, CN 1 0

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