Semiconductor device with connecting structure having a doped layer and method for forming the same

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United States of America Patent

PATENT NO 11791204
APP PUB NO 20210327818A1
SERIAL NO

17171210

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Abstract

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A connecting structure includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a first metal portion disposed in the first dielectric layer and in contact with the conductive feature, and a doped metal portion disposed over the first metal portion. The first metal portion and the doped metal portion include a same noble metal material. The doped dielectric layer and the doped metal portion include same dopants.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Huicheng Tainan, TW 230 853
Chen, Kuo-Ju Taichung, TW 54 80
Chen, Liang-Yin Hsinchu, TW 120 362
Huang, Chun-Hsien Hsinchu, TW 100 285
Liu, Su-Hao Jhongpu Township, TW 82 800
Yeo, Yee-Chia Hsinchu, TW 428 6714

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