Semiconductor device and fabrication method of semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11495690
APP PUB NO 20210005751A1
SERIAL NO

16969259

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Abstract

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A semiconductor device having high on-state current and high reliability is provided. The semiconductor device includes, a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor and a second conductor over the second oxide; a third oxide over the second oxide; a second insulator over the third oxide; a third conductor located over the second insulator and overlapping with the third oxide; a third insulator in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor; a fourth insulator over the third insulator; a fifth insulator over the fourth insulator; and a sixth insulator over the third conductor, the second insulator, the third oxide and the fifth insulator. The sixth insulator is in contact with a top surface of each of the third conductor, the second insulator, the third oxide, and the fifth insulator.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hodo, Ryota Atsugi, JP 67 194
Tochibayashi, Katsuaki Isehara, JP 65 559
Yamazaki, Shunpei Setagaya, JP 7291 226813

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